Resonant band engineering of ferroelectric tunnel junctions
نویسندگان
چکیده
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). predict that an ultrathin dielectric layer with a smaller gap, embedded into barrier layer, acts as switch controlling high and low conductance states of FTJ depending on polarization orientation. Using first-principles modeling based density functional theory, we investigate this phenomenon for prototypical SrRuO3/BaTiO3/SrRuO3 BaSnO3 monolayer the BaTiO3 barrier. show such composite-barrier FTJ, shifts conduction minimum above or below Fermi The resulting switching between direct resonant leads TER effect giant ON/OFF ratio. proposed FTJs can serve viable tool their performance useful device application.
منابع مشابه
Functional ferroelectric tunnel junctions on silicon
The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ...
متن کاملFerroelectric tunnel junctions with graphene electrodes.
Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...
متن کاملGiant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical review
سال: 2021
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.104.l060101